| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.16 Ω |
| Polarity | N-Channel |
| Power Dissipation | 79 W |
| Threshold Voltage | 2 V |
| Input Capacitance | 930pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 15.0 A |
| Rise Time | 100 ns |
| Input Capacitance (Ciss) | 930pF @25V(Vds) |
| Fall Time | 48 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 88 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IRL530PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout the industry.
● Dynamic dv/dt rating
● Repetitive avalanche rated
● Logic-level gate drive
● Fast switching
● Ease of paralleling
● ±10V Gate to source voltage
● 1.7°C/W Thermal resistance, junction to case
● 62°C/W Thermal resistance, junction to ambient
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