TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Drain to Source Resistance (on) (Rds) | 160 mΩ |
Polarity | N-CH |
Power Dissipation | 3.7 W |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 15A |
Rise Time | 100 ns |
Input Capacitance (Ciss) | 930pF @25V(Vds) |
Fall Time | 48 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3700 mW |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Minimum Packing Quantity | 2000 |
VISHAY
8 Pages / 1.03 MByte
Vishay Siliconix
MOSFET N-CH 100V 15A TO-220AB
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packaget
Vishay Semiconductor
Trans MOSFET N-CH 100V 15A 3Pin(3+Tab) TO-220AB
Fairchild
Power Field-Effect Transistor, 14A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Samsung
Power Field-Effect Transistor, 13A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Infineon
Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
15A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.