TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 36.0 A |
Case/Package | D2PAK |
Power Rating | 3.8 W |
Drain to Source Resistance (on) (Rds) | 0.063 Ω |
Polarity | N-Channel |
Power Dissipation | 3.8 W |
Part Family | IRL540NS |
Input Capacitance | 1800pF @25V |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Continuous Drain Current (Ids) | 36.0 A |
Rise Time | 81.0 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 10.67 mm |
Size-Height | 4.83 mm |
Operating Temperature | -55℃ ~ 175℃ |
International Rectifier
11 Pages / 0.89 MByte
Vishay Siliconix
MOSFET N-CH 100V 28A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 100V 28A 3Pin(3+Tab) TO-220
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Fairchild
Power Field-Effect Transistor, 28A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Samsung
Power Field-Effect Transistor, 24A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Intertechnology
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.