| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0015 Ω |
| Polarity | N-Channel |
| Power Dissipation | 375 W |
| Threshold Voltage | 2.4 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Continuous Drain Current (Ids) | 305A |
| Rise Time | 185 ns |
| Input Capacitance (Ciss) | 15570pF @25V(Vds) |
| Fall Time | 120 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 375W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● Optimized for Logic Level Drive
● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
● Fully Characterized Capacitance and Avalanche SOA
● Enhanced body diode dV/dt and dI/dt Capability
● Lead-Free
● RoHS Compliant, Halogen-Free
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