| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 800 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 39 W |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 5.00 A |
| Rise Time | 6 ns |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.7 mm |
| Size-Height | 16.3 mm |
Advanced Power MOSFET
●FEATURES
●♦Logic-Level Gate Drive
●♦Avalanche Rugged Technology
●♦Rugged Gate Oxide Technology
●♦Lower Input Capacitance
●♦Improved Gate Charge
●♦Extended Safe Operating Area
●♦Lower Leakage Current: 10µA (Max.) @ VDS= 100V
●♦Lower RDS(ON): 0.336Ω(Typ.)
Fairchild
8 Pages / 0.23 MByte
International Rectifier
MOSFET N-CH 200V 5.2A TO-220AB
VISHAY
MOSFET N-CH 200V 5.2A TO-220AB
Vishay Siliconix
MOSFET N-CH 200V 5.2A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 200V 5.2A 3Pin(3+Tab) TO-220AB
IRF
Power MOSFET(Vdss=200V, Rds(on)=0.8Ω, Id=5.2A)
VISHAY
TO-220-3 N-CH 200V 5.2A 800mΩ
Vishay Siliconix
Trans MOSFET N-CH 200V 5.2A 3Pin(3+Tab) TO-220AB
Vishay Semiconductor
VISHAY IRL620SPBF MOSFET Transistor, N Channel, 5.2A, 200V, 800mohm, 10V, 2V
VISHAY
TO-252-3 N-CH 200V 5.2A 800mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.8Ω; ID 5.2A; TO-220AB; PD 50W; VGS +/-10V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
