| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 200 V |
| Current Rating | 5.20 A |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200V (min) |
| Continuous Drain Current (Ids) | 5.20 A |
| Rise Time | 31.0 ns |
Description
●Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
●Isolated Package
●High Voltage Isolation = 2.5KVRMS
●Sink to Lead Creepage Dist. 4.8mm
●Logic-Level Gate Drive
●RDS(ON) Specified at VGS = 4V & 5V
●Fast Switching
●Ease of paralleling
International Rectifier
8 Pages / 0.28 MByte
International Rectifier
9 Pages / 0.32 MByte
International Rectifier
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