| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.4 Ω |
| Polarity | N-Channel |
| Power Dissipation | 74 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 9.00 A |
| Rise Time | 57 ns |
| Input Capacitance (Ciss) | 1100pF @25V(Vds) |
| Fall Time | 33 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 74000 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 10.41 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.01 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The IRL630PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
● Dynamic dV/dt rating
● -55 to 150°C Operating temperature range
● Repetitive avalanche rated
● Logic-level gate drive
● Ease of paralleling
● RDS (ON) Specified at VGS = 4 and 5V
Vishay Semiconductor
9 Pages / 2.22 MByte
Vishay Semiconductor
9 Pages / 2.22 MByte
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