TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.012 Ω |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 1.1 V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 9.9A |
Rise Time | 12 ns |
Input Capacitance (Ciss) | 1025pF @25V(Vds) |
Fall Time | 14 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRL6342TRPBF is a HEXFET® single N-channel Power MOSFET for use with battery protection, high side and low side load switch.
● Industry standard package for multi-vendor compatibility
● Halogen-free
● Logic level
● Consumer qualification MSL-1 (increased reliability)
Infineon
8 Pages / 0.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
8 Pages / 0.11 MByte
Infineon
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International Rectifier
Trans MOSFET N-CH 30V 9.9A 8Pin SOIC T/R
International Rectifier
Trans MOSFET N-CH 30V 9.9A 8Pin SOIC Tube
IFC
N-Channel 30V 14.6mΩ 11NC Surface Mount Hexfet Power Mosfet - SOIC-8
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.