| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.18 Ω |
| Power Dissipation | 110 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 200 V |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 1310pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.7 mm |
| Size-Height | 16.3 mm |
The IRL640A is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary planar DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is well suited for high efficiency switching DC-to-DC converters, switch mode power supplies, DC-to-AC converters for uninterrupted power supply.
● Logic-level gate drive
● Improved dV/dt capability
● 100% Avalanche tested
● Fast switching
● 40nC Typical low gate charge
● 95pF Typical low Crss
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