| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 18.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 180 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 18.0 A |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 1705pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.7 mm |
| Size-Height | 16.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRL640A is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary planar DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is well suited for high efficiency switching DC-to-DC converters, switch mode power supplies, DC-to-AC converters for uninterrupted power supply.
● Logic-level gate drive
● Improved dV/dt capability
● 100% Avalanche tested
● Fast switching
● 40nC Typical low gate charge
● 95pF Typical low Crss
Fairchild
9 Pages / 0.82 MByte
Fairchild
10 Pages / 0.87 MByte
Fairchild
1 Pages / 0.06 MByte
Fairchild
4 Pages / 0.5 MByte
Vishay Siliconix
MOSFET N-CH 200V 17A TO-220AB
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
Trans MOSFET N-CH 200V 17A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Samsung
Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Fairchild
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
ON Semiconductor
Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 18 A, 180 mΩ, TO-220, 1000-TUBE
VISHAY
TO-220-3 N-CH 200V 17A 180mΩ
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
