| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 180 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 17.0 A |
| Rise Time | 83 ns |
| Input Capacitance (Ciss) | 1800pF @25V(Vds) |
| Input Power (Max) | 3.1 W |
| Fall Time | 52 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.1 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Minimum Packing Quantity | 2000 |
The IRL640SPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is surface-mount and capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. This package is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Logic-level gate drive
● RDS (ON) Specified at VGS = 4 and 5V
● Surface-mount
● Halogen-free
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