| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-263-3 |
| Power Dissipation | 3.1W (Ta), 125W (Tc) |
| Drain to Source Voltage (Vds) | 200 V |
| Input Capacitance (Ciss) | 1800pF @25V(Vds) |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 200V 17A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK
Vishay Siliconix
9 Pages / 0.96 MByte
Vishay Siliconix
10 Pages / 0.98 MByte
Vishay Siliconix
MOSFET N-CH 200V 17A TO-220AB
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
Trans MOSFET N-CH 200V 17A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Samsung
Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Fairchild
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
ON Semiconductor
Power MOSFET, N-Channel, Logic Level, A-FET, 200 V, 18 A, 180 mΩ, TO-220, 1000-TUBE
VISHAY
TO-220-3 N-CH 200V 17A 180mΩ
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
