| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 10 Pin |
| Case/Package | Direct-FET |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.001 Ω |
| Polarity | N-Channel |
| Power Dissipation | 104 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Ids) | 209A |
| Rise Time | 110 ns |
| Input Capacitance (Ciss) | 6904pF @25V(Vds) |
| Fall Time | 47 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 104W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.35 mm |
| Size-Width | 5.05 mm |
| Size-Height | 0.7 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● Short-circuit protection
● Optimized for Logic Level Drive
● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
● Fully Characterized Capacitance and Avalanche SOA
● Enhanced body diode dv/dt and di/dt Capability
● Lead-Free, RoHS Compliant
● StrongIRFET™
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11 Pages / 0.49 MByte
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37 Pages / 2.01 MByte
International Rectifier
40V Single N-Channel HEXFET Power MOSFET in a DirectFET ME package
Infineon
40V Single N-Channel HEXFET Power MOSFET in a DirectFET ME package
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