| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 105 A |
| Case/Package | TO-263-3 |
| Drain to Source Resistance (on) (Rds) | 6 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Part Family | IRL8113S |
| Input Capacitance | 2840pF @15V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 105 A |
| Rise Time | 38.0 ns |
| Input Capacitance (Ciss) | 2840pF @15V(Vds) |
| Input Power (Max) | 110 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Height | 4.703 mm |
| Operating Temperature | -55℃ ~ 175℃ |
●N-Channel Power MOSFET over 100A, Infineon
●The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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