| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 65 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0065 Ω |
| Polarity | N-CH |
| Power Dissipation | 65 W |
| Threshold Voltage | 1.8 V |
| Input Capacitance | 1077 pF |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 62A |
| Rise Time | 93 ns |
| Input Capacitance (Ciss) | 1077pF @15V(Vds) |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 65W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.02 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLB8721PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor power, optimized for UPS/inverter applications, high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.
● Very low RDS (ON) at 4.5V VGS
● Ultra low gate impedance
● Fully characterized capacitance and avalanche voltage and current
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30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International Rectifier
The IRLB8721PBF is a 30V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high frequency synchronous buck, converters for computer processor power, optimized for UPS/inverter applications, high frequency isolated DC-DC converters with synchronous rectification for telecom and industrial use.
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