TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 4 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 1.70 A |
Case/Package | DIP-4 |
Number of Positions | 4 Position |
Drain to Source Resistance (on) (Rds) | 0.2 Ω |
Polarity | N-Channel |
Power Dissipation | 1.3 W |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Continuous Drain Current (Ids) | 1.70 A |
Rise Time | 110 ns |
Input Capacitance (Ciss) | 400pF @25V(Vds) |
Input Power (Max) | 1.3 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.3 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 6.29 mm |
Size-Height | 3.37 mm |
Minimum Packing Quantity | 2500 |
The IRLD014PBF is a 60V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is a low cost machine-insertiable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain servers as a thermal link to the mounting surface for power dissipation levels up to 1W.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● 175°C Operating temperature
● Easy to parallel
● Simple drive requirement
● For automatic insertion
● End stackable
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