| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 1.30 A |
| Case/Package | DIP |
| Power Rating | 1.3 W |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.27 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.3 W |
| Threshold Voltage | 2 V |
| Input Capacitance | 490pF @25V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 1.30 A |
| Rise Time | 64.0 ns |
| Input Capacitance (Ciss) | 490pF @25V(Vds) |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.3 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 6.29 mm |
| Size-Height | 3.37 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IRLD120PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
● Dynamic dV/dt rating
● For automatic insertion
● Repetitive avalanche rated
● End stackable
● Logic-level gate drive
● RDS (ON) Specified at VGS = 4 and 5V
● -55 to 175°C Operating temperature range
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