| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | DIP-4 |
| Power Dissipation | 1300 mW |
| Rise Time | 64 ns |
| Input Capacitance (Ciss) | 490pF @25V(Vds) |
| Fall Time | 27 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 1.3W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 6.29 mm |
| Size-Width | 5 mm |
| Size-Height | 3.37 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
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9 Pages / 1.64 MByte
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1 Pages / 0.12 MByte
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Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVMDIP-4
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