| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | 3X3-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.002 Ω |
| Polarity | N-CH |
| Power Dissipation | 2.7 W |
| Threshold Voltage | 800 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Continuous Drain Current (Ids) | 26A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 3620pF @10V(Vds) |
| Fall Time | 37 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.7W (Ta), 37W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.3 mm |
| Size-Width | 3.3 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRLHM620TR2PBF is a HEXFET® single N-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for secondary side synchronous rectification, high side and low side switch. It is compatible with existing surface-mount techniques.
● Low RDS (ON) (<2.5mR) results in low conduction losses
● Low thermal resistance to PCB (<3.4°C/W) enables better thermal dissipation
● Low profile (<1mm) results in increased power density
● Halogen-free
● Industrial qualification MSL-1 (increased reliability)
Infineon
9 Pages / 0.51 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
4 Pages / 0.07 MByte
Infineon
3 Pages / 0.07 MByte
International Rectifier
Trans MOSFET N-CH 20V 26A 8Pin PQFN EP T/R
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