| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 42 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.044 Ω |
| Polarity | N-Channel |
| Power Dissipation | 42 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 23A |
| Rise Time | 81 ns |
| Input Capacitance (Ciss) | 1800pF @25V(Vds) |
| Fall Time | 62 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 54W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.6 mm |
| Size-Width | 4.8 mm |
| Size-Height | 9.8 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLI540NPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● Isolated package
● 2.5kVrms High voltage isolation
● 4.8mm Sink to lead creepage distance
● Fully avalanche rated
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