| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 2.00 A |
| Case/Package | TO-261-4 |
| Polarity | N-CH |
| Power Dissipation | 1W (Ta) |
| Part Family | IRLL014N |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 2.00 A |
| Rise Time | 4.90 ns |
| Input Capacitance (Ciss) | 230pF @25V(Vds) |
| Power Dissipation (Max) | 1W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | End of Life |
| Packaging | Tape |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 55V 2A (Ta) 1W (Ta) Surface Mount SOT-223
Infineon
9 Pages / 0.15 MByte
Infineon
10 Pages / 0.25 MByte
International Rectifier
MOSFET N-CH 60V 2.7A SOT223
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
Vishay Intertechnology
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
Infineon
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4
International Rectifier
Trans MOSFET N-CH 55V 2.8A 4Pin(3+Tab) SOT-223 T/R
VISHAY
SOT-223-3 N-CH 60V 2.7A 200mΩ
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