| TYPE | DESCRIPTION |
|---|
| Case/Package | SOT-223 |
HEXFET® Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. Surface Mount Advanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating Fast Switching Fully Avalanche Rated
International Rectifier
9 Pages / 0.16 MByte
International Rectifier
9 Pages / 0.15 MByte
International Rectifier
MOSFET N-CH 60V 2.7A SOT223
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
Vishay Intertechnology
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
Infineon
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4
International Rectifier
Trans MOSFET N-CH 55V 2.8A 4Pin(3+Tab) SOT-223 T/R
VISHAY
SOT-223-3 N-CH 60V 2.7A 200mΩ
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