| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-261-4 |
| Power Dissipation | 3.1 W |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 110 ns |
| Input Capacitance (Ciss) | 400pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.8 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 60V 2.7A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Vishay Siliconix
8 Pages / 0.15 MByte
Vishay Siliconix
8 Pages / 0.15 MByte
Vishay Siliconix
2 Pages / 0.04 MByte
Vishay Siliconix
1 Pages / 0.12 MByte
International Rectifier
MOSFET N-CH 60V 2.7A SOT223
Vishay Siliconix
MOSFET N-CH 60V 2.7A SOT223
Vishay Intertechnology
Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Vishay Semiconductor
Trans MOSFET N-CH 60V 2.7A 4Pin(3+Tab) SOT-223
Infineon
Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT, PLASTIC PACKAGE-4
International Rectifier
Trans MOSFET N-CH 55V 2.8A 4Pin(3+Tab) SOT-223 T/R
VISHAY
SOT-223-3 N-CH 60V 2.7A 200mΩ
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
