| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 1.50 A |
| Case/Package | TO-261-4 |
| Power Rating | 3.1 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.54 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 1.50 A |
| Rise Time | 47 ns |
| Input Capacitance (Ciss) | 250pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 18 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.45 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRLL110PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Logic-level gate drive
● RDS (ON) Specified at VGS = 4 and 5V
● Surface-mount
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