TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | TO-261-4 |
Drain to Source Resistance (on) (Rds) | 540 mΩ |
Power Dissipation | 2W (Ta), 3.1W (Tc) |
Drain to Source Voltage (Vds) | 100 V |
Input Capacitance (Ciss) | 250pF @25V(Vds) |
Input Power (Max) | 2 W |
Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223
Vishay Siliconix
9 Pages / 0.34 MByte
Vishay Siliconix
9 Pages / 0.34 MByte
Vishay Siliconix
2 Pages / 0.04 MByte
Vishay Siliconix
1 Pages / 0.12 MByte
Vishay Siliconix
MOSFET N-CH 100V 1.5A SOT223
International Rectifier
MOSFET N-CH 100V 1.5A SOT223
Vishay Intertechnology
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
Vishay Semiconductor
Trans MOSFET N-CH 100V 1.5A 4Pin(3+Tab) SOT-223
IRF
Power MOSFET(Vdss=100V, Rds(on)=0.54Ω, Id=1.5A)
VISHAY
SOT-223-3 N-CH 100V 1.5A 540mΩ
Vishay Siliconix
Trans MOSFET N-CH 100V 1.5A 4Pin(3+Tab) SOT-223 T/R
Vishay Semiconductor
Trans MOSFET N-CH 100V 1.5A 4Pin(3+Tab) SOT-223 T/R
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ω; ID 1.5A; SOT-223; PD 3.1W; VGS +/-10V
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