| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.25 Ω |
| Polarity | N-CH |
| Power Dissipation | 540 mW |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 1.2A |
| Rise Time | 9.5 ns |
| Input Capacitance (Ciss) | 110pF @15V(Vds) |
| Fall Time | 4.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 540 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
The IRLML2402PBF is a N-channel HEXFET® Power MOSFET with lower switch losses and increased reliability. The international rectifier utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Industry-standard pinout
● MSL1, Consumer qualification
● Low profile (<1.1mm)
● Fast switching speed
● Ultra low on resistance
Infineon
9 Pages / 0.24 MByte
Infineon
8 Pages / 0.19 MByte
International Rectifier
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International Rectifier
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.25Ω; ID 1.2A; Micro3; PD 540mW; VGS +/-12V
International Rectifier
MOSFET N-CH 20V 1.2A SOT-23
International Rectifier
Trans MOSFET N-CH 20V 1.2A 3Pin SOT-23 T/R
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