| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Power Rating | 0.54 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.25 Ω |
| Polarity | N-Channel |
| Power Dissipation | 540 mW |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 1.2A |
| Rise Time | 9.5 ns |
| Input Capacitance (Ciss) | 110pF @15V(Vds) |
| Input Power (Max) | 540 mW |
| Fall Time | 4.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 540mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.02 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● 150°C Operating Temperature
Infineon
9 Pages / 0.24 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
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5 Pages / 0.32 MByte
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2 Pages / 0.04 MByte
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1 Pages / 0.13 MByte
International Rectifier
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International Rectifier
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.25Ω; ID 1.2A; Micro3; PD 540mW; VGS +/-12V
International Rectifier
MOSFET N-CH 20V 1.2A SOT-23
International Rectifier
Trans MOSFET N-CH 20V 1.2A 3Pin SOT-23 T/R
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