| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Drain to Source Resistance (on) (Rds) | 45 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 1.25 W |
| Threshold Voltage | 1.2 V |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 4.20 A |
| Rise Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Operating Temperature | -55℃ ~ 150℃ |
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
●Ultra Low On-Resistance
●N-Channel MOSFET
●SOT-23 Footprint
●Low Profile (<1.1mm)
●Available in Tape and Reel
●Fast Switching
●Lead-Free
●Halogen-Free
International Rectifier
9 Pages / 0.19 MByte
International Rectifier
HEXFET, N채널, Vd = 20V, Rds = 0.045Ω, Id = 4.2A, SOT-23패키지
International Rectifier
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.035Ω; ID 4.2A; Micro3; PD 1.25W; VGS +/-12V
International Rectifier
MOSFET N-CH 20V 4.2A SOT-23
International Rectifier
The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
International Rectifier
Trans MOSFET N-CH 20V 4.2A 3Pin SOT-23 T/R
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