| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.045 Ω |
| Polarity | N-CH |
| Power Dissipation | 1.25 W |
| Threshold Voltage | 1.2 V |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 4.2A |
| Input Capacitance (Ciss) | 740pF @15V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.25 W |
| TYPE | DESCRIPTION |
|---|
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.02 mm |
The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
● Drain to source voltage (Vds) of 20V
● Gate to source voltage of ±12V
● On resistance Rds(on) of 35mohm at Vgs 4.5V
● Power dissipation Pd of 1.25W at 25°C
● Continuous drain current Id of 4.2A at vgs 4.5V and 25°C
● Operating junction temperature range from -55°C to 150°C
Infineon
9 Pages / 0.19 MByte
International Rectifier
HEXFET, N채널, Vd = 20V, Rds = 0.045Ω, Id = 4.2A, SOT-23패키지
International Rectifier
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.035Ω; ID 4.2A; Micro3; PD 1.25W; VGS +/-12V
International Rectifier
MOSFET N-CH 20V 4.2A SOT-23
International Rectifier
The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
International Rectifier
Trans MOSFET N-CH 20V 4.2A 3Pin SOT-23 T/R
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