| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 4.20 A |
| Case/Package | SOT-23 |
| Part Family | IRLML2502 |
| Drain to Source Voltage (Vds) | 20.0 V |
| Continuous Drain Current (Ids) | 4.20 A |
| Rise Time | 10.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | End of Life |
| Packaging | Cut Tape (CT) |
Description
●These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
●• Ultra Low On-Resistance
●• N-Channel MOSFET
●• SOT-23 Footprint
●• Low Profile (<1.1mm)
●• Available in Tape and Reel
●• Fast Switching
International Rectifier
9 Pages / 0.14 MByte
International Rectifier
9 Pages / 0.12 MByte
International Rectifier
HEXFET, N채널, Vd = 20V, Rds = 0.045Ω, Id = 4.2A, SOT-23패키지
International Rectifier
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.035Ω; ID 4.2A; Micro3; PD 1.25W; VGS +/-12V
International Rectifier
MOSFET N-CH 20V 4.2A SOT-23
International Rectifier
The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
International Rectifier
Trans MOSFET N-CH 20V 4.2A 3Pin SOT-23 T/R
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