| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 4.20 A |
| Case/Package | SOT-23-3 |
| Polarity | N-CH |
| Power Dissipation | 1.25W (Ta) |
| Part Family | IRLML2502 |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 4.20 A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 740pF @15V(Vds) |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.25W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | End of Life |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 20V 4.2A (Ta) Surface Mount Micro3™/SOT-23
Infineon
9 Pages / 0.12 MByte
Infineon
2 Pages / 0.12 MByte
Infineon
9 Pages / 0.12 MByte
International Rectifier
HEXFET, N채널, Vd = 20V, Rds = 0.045Ω, Id = 4.2A, SOT-23패키지
International Rectifier
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.035Ω; ID 4.2A; Micro3; PD 1.25W; VGS +/-12V
International Rectifier
MOSFET N-CH 20V 4.2A SOT-23
International Rectifier
The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
International Rectifier
Trans MOSFET N-CH 20V 4.2A 3Pin SOT-23 T/R
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