| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Power Rating | 1.25 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.035 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.25 W |
| Threshold Voltage | 1.2 V |
| Input Capacitance | 740 pF |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Continuous Drain Current (Ids) | 4.2A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 740pF @15V(Vds) |
| Input Power (Max) | 1.25 W |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.25W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3.04 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
● Ultra Low On-Resistance
● N-Channel MOSFET
● SOT-23 Footprint
● Low Profile (
● Available in Tape and Reel
● Fast Switching
● Lead-Free
● RoHS Compliant, Halogen-Free
Infineon
9 Pages / 0.19 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
2 Pages / 0.06 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
HEXFET, N채널, Vd = 20V, Rds = 0.045Ω, Id = 4.2A, SOT-23패키지
International Rectifier
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.035Ω; ID 4.2A; Micro3; PD 1.25W; VGS +/-12V
International Rectifier
MOSFET N-CH 20V 4.2A SOT-23
International Rectifier
The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
International Rectifier
Trans MOSFET N-CH 20V 4.2A 3Pin SOT-23 T/R
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