TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.3 Ω |
Polarity | N-CH |
Power Dissipation | 400 mW |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 1.2A |
Operating Temperature (Max) | 150 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
The IRLML2803PBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Fifth generation HEXFETs from International rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Low profile (<1.1mm)
● Ultra low on-resistance
● ±20V Gate-source voltage
● Halogen-free
Infineon
9 Pages / 0.24 MByte
Infineon
4 Pages / 0.21 MByte
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