| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.6 Ω |
| Polarity | P-Channel |
| Power Dissipation | 540 mW |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 0.76A |
| Rise Time | 8.2 ns |
| Input Capacitance (Ciss) | 75pF @25V(Vds) |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 540 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.02 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Infineon
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27 Pages / 0.31 MByte
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37 Pages / 2.01 MByte
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International Rectifier
P-channel power MOSFET, 30V, 0.76A
International Rectifier
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.6Ω; ID -0.76A; Micro3; PD 540mW; VGS +/-20V
International Rectifier
MOSFET P-CH 30V 760mA SOT-23
International Rectifier
Trans MOSFET P-CH 30V 0.76A 3Pin Micro
International Rectifier
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