TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Power Rating | 0.54 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.6 Ω |
Polarity | P-Channel |
Power Dissipation | 540 mW |
Threshold Voltage | 1 V |
Input Capacitance | 75 pF |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 0.76A |
Rise Time | 8.2 ns |
Input Capacitance (Ciss) | 75pF @25V(Vds) |
Input Power (Max) | 540 mW |
Fall Time | 16 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 540 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.04 mm |
Size-Width | 1.4 mm |
Size-Height | 1.02 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRLML5103TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation.
● Generation V technology
● Low profile (<1.1mm)
● Fast switching
● Low static drain-to-source ON-resistance
● Dynamic dV/dt rating
● Fully avalanche rating
● Halogen-free
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