TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | SOT-23-3 |
Power Rating | 1.3 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.05 Ω |
Polarity | P-Channel |
Power Dissipation | 1.3 W |
Threshold Voltage | 550 mV |
Input Capacitance | 830 pF |
Drain to Source Voltage (Vds) | 12 V |
Continuous Drain Current (Ids) | 4.3A |
Rise Time | 32 ns |
Input Capacitance (Ciss) | 830pF @10V(Vds) |
Input Power (Max) | 1.3 W |
Fall Time | 210 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.3W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.04 mm |
Size-Width | 1.4 mm |
Size-Height | 1.02 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRLML6401TRPBF is a -12V single P-channel HEXFET Power MOSFET, compatible with existing surface mount techniques. This MOSFET features increased reliability and easier manufacturing.
● Halogen-free
● MSL1, Industrial qualification
● Multi-vendor compatibility
● Environmentally-friendly
● Trench MOSFET technology
● ±8V Gate to source voltage
● 0.01W/°C Linear derating factor
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International Rectifier
P채널 MOSFET, 초소형 SOT23패키지, HEXFET, Vd = -12V, Rds = 0.05Ω, Id = 48A, Id = 4.3A
International Rectifier
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ω; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V
International Rectifier
Trans MOSFET P-CH 12V 4.3A 3Pin SOT-23 T/R
International Rectifier
Trans MOSFET P-CH 12V 4.3A 3Pin SOT-23 T/R
International Rectifier
Trans MOSFET P-CH 12V 4.3A 3Pin Micro
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