IRLMS1902TR Datasheet PDF - International Rectifier

Generation V Technology Micro 6 Package Style Ultra Low Rds(on) P-Channel MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It"s unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.