| TYPE | DESCRIPTION |
|---|
| Number of Pins | 6 Pin |
| Case/Package | µSOIC |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.03 Ω |
| Polarity | N-CH |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.2 V |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 6.5A |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
The IRLMS2002PBF is a HEXFET® N-channel Power MOSFET utilizes advanced processing techniques to achieve the extremely low ON-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™ package with its customized lead-frame produces a HEXFET® power MOSFET. This package is ideal for applications where printed circuit board space is at a premium. It"s unique thermal design and RDS (ON) reduction enables a current-handling increase of nearly 300%.
● Ultra-low ON-resistance
Infineon
8 Pages / 0.14 MByte
International Rectifier
MOSFET N-CH 20V 6.5A TSOP-6
International Rectifier
MOSFET, Power; N-Ch; VDSS 20V; RDS(ON) 0.03Ω; ID 6.5A; Micro6; PD 2W; VGS +/-12V; -55d
International Rectifier
MOSFET N-CH 20V 6.5A 6-TSOP
International Rectifier
MOSFET, 20V, 6.5A, 30MOHM, 15NC QG, LOGIC LEVEL, TSOP-6, HALOGEN-FREE
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