| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -2.30 A |
| Case/Package | TSOP-6 |
| Drain to Source Resistance (on) (Rds) | 0.235 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.7 W |
| Part Family | IRLMS5703 |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | -30.0 V |
| Continuous Drain Current (Ids) | -2.30 A |
| Rise Time | 12.0 ns |
| Input Capacitance (Ciss) | 170pF @25V(Vds) |
| Input Power (Max) | 1.7 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Height | 1.45 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●HEXFET® P-Channel Power MOSFETs, Infineon
●HEXFET® Power MOSFETs present a variety of rugged single P-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
International Rectifier
9 Pages / 0.26 MByte
International Rectifier
9 Pages / 0.2 MByte
International Rectifier
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packageg
International Rectifier
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.18Ω; ID -2.4A; Micro6; PD 1.7W; VGS +/-20V
International Rectifier
MOSFET P-CH 30V 2.3A 6-TSOP
IRF
MOSFET P-CH 30V 2.4A 6-TSOP
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