TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | SOT-23-6 |
Power Rating | 1.7 W |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 0.2 Ω |
Polarity | P-Channel |
Power Dissipation | 1.7 W |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 2.3A |
Rise Time | 12 ns |
Input Capacitance (Ciss) | 170pF @25V(Vds) |
Input Power (Max) | 1.7 W |
Fall Time | 8.4 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 1.7W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 1.75 mm |
Size-Height | 1.3 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
● P-Channel MOSFET
Infineon
8 Pages / 0.2 MByte
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270 Pages / 11.59 MByte
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15 Pages / 0.24 MByte
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2 Pages / 0.17 MByte
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37 Pages / 2.01 MByte
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5 Pages / 0.32 MByte
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3 Pages / 0.07 MByte
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9 Pages / 0.17 MByte
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1 Pages / 0.15 MByte
International Rectifier
-30V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) packageg
International Rectifier
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.18Ω; ID -2.4A; Micro6; PD 1.7W; VGS +/-20V
International Rectifier
MOSFET P-CH 30V 2.3A 6-TSOP
IRF
MOSFET P-CH 30V 2.4A 6-TSOP
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