| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-23-6 |
| Power Rating | 2 W |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 50 mΩ |
| Polarity | P-CH |
| Power Dissipation | 2 W |
| Input Capacitance | 1079 pF |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Continuous Drain Current (Ids) | 5.6A |
| Rise Time | 33 ns |
| Input Capacitance (Ciss) | 1079pF @10V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 72 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3 mm |
| Size-Width | 1.5 mm |
| Size-Height | 1.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Single P-Channel 20 V 0.100 Ohm 16 nC 2 W Silicon SMT Mosfet - MICRO-6
Infineon
6 Pages / 1.08 MByte
Infineon
27 Pages / 0.3 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.07 MByte
Infineon
1 Pages / 0.15 MByte
International Rectifier
HEXFET, P채널, Vd = -20V, Rds = 0.05Ω, Id = -5.6A, TSOP-6(SOT-23패키지보다 훨씬작은패키지)
International Rectifier
MOSFET P-CH 20V 5.6A 6-TSOP
International Rectifier
MOSFET P-CH 20V 5.6A 6-TSOP
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