TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Rating | 341 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0014 Ω |
Polarity | N-Channel |
Power Dissipation | 341 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 40 V |
Continuous Drain Current (Ids) | 327A |
Rise Time | 827 ns |
Input Capacitance (Ciss) | 10315pF @25V(Vds) |
Input Power (Max) | 341 W |
Fall Time | 355 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 341W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 15.87 mm |
Size-Width | 5.31 mm |
Size-Height | 20.7 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLP3034PBF is a HEXFET® N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is optimized for logic level drive. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Very low RDS (ON) at 4.5V VGS
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
Infineon
8 Pages / 0.29 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.32 MByte
Infineon
30V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International Rectifier
MOSFET N-CH 40V 195A TO-247AC
International Rectifier
MOSFET MOSFT 40V 327A 1.7mOhm 108NC TO221
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.