| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 17.0 A |
| Case/Package | DPAK-252 |
| Drain to Source Resistance (on) (Rds) | 65 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 45 W |
| Part Family | IRLR024N |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55.0V (min) |
| Continuous Drain Current (Ids) | 17.0 A |
| Rise Time | 74.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Description
●Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
●Logic-Level Gate Drive
●Surface Mount (IRLR024N)
●Straight Lead (IRLU024N)
●Advanced Process Technology
●Fast Switching
●Fully Avalanche Rated
International Rectifier
11 Pages / 0.3 MByte
VISHAY
TO-252-3 N-CH 60V 14A 100mΩ
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, DPAK-3
Samsung
Power Field-Effect Transistor, 14A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 17A; D-Pak (TO-252AA); PD 45W
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