TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Power Rating | 38 W |
Drain to Source Resistance (on) (Rds) | 0.11 Ω |
Polarity | N-Channel |
Power Dissipation | 45 W |
Input Capacitance | 480 pF |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55 V |
Continuous Drain Current (Ids) | 17A |
Rise Time | 74 ns |
Input Capacitance (Ciss) | 480pF @25V(Vds) |
Fall Time | 29 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 45W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 6.73 mm |
Size-Width | 6.22 mm |
Size-Height | 2.39 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
● Logic Level
Infineon
11 Pages / 0.3 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
VISHAY
TO-252-3 N-CH 60V 14A 100mΩ
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, DPAK-3
Samsung
Power Field-Effect Transistor, 14A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 17A; D-Pak (TO-252AA); PD 45W
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.