| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | N-CH |
| Power Dissipation | 2.5 W |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 14A |
| Rise Time | 110 ns |
| Input Capacitance (Ciss) | 870pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 41 ns |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 2000 |
VISHAY
11 Pages / 0.75 MByte
VISHAY
12 Pages / 0.21 MByte
VISHAY
TO-252-3 N-CH 60V 14A 100mΩ
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Vishay Semiconductor
Trans MOSFET N-CH 60V 14A 3Pin(2+Tab) DPAK
Vishay Intertechnology
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, DPAK-3
Samsung
Power Field-Effect Transistor, 14A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 17A; D-Pak (TO-252AA); PD 45W
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
