| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 14A |
| Rise Time | 110 ns |
| Input Capacitance (Ciss) | 870pF @25V(Vds) |
| Fall Time | 41 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Minimum Packing Quantity | 2000 |
VISHAY
8 Pages / 1.11 MByte
VISHAY
10 Pages / 0.3 MByte
VISHAY
TO-252-3 N-CH 60V 14A 100mΩ
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60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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Samsung
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MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 17A; D-Pak (TO-252AA); PD 45W
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