TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 55.0 V |
Current Rating | 16.0 A |
Case/Package | TO-252 |
Power Rating | 35 W |
Drain to Source Resistance (on) (Rds) | 58 mΩ |
Polarity | N-Channel |
Power Dissipation | 35 W |
Part Family | IRLR024Z |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55.0 V |
Continuous Drain Current (Ids) | 16.0 A |
Rise Time | 43.0 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Operating Temperature | -55℃ ~ 175℃ |
Description
●Specifically designed for Automotive applications, this HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
●Features
●Logic Level
●Advanced Process Technology
●Ultra Low On-Resistance
●175°C Operating Temperature
●Fast Switching
●Repetitive Avalanche Allowed up to Tjmax
●Lead-Free
International Rectifier
11 Pages / 0.32 MByte
International Rectifier
12 Pages / 0.27 MByte
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