| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 4.30 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.54 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 4.30 A |
| Rise Time | 47 ns |
| Input Capacitance (Ciss) | 250pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 17 ns |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ |
| Minimum Packing Quantity | 2000 |
The IRLR110PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
● Dynamic dV/dt rating
● Repetitive avalanche rated
● Surface-mount
● Logic-level gate drive
● RDS (ON) Specified at VGS = 4 and 5V
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