| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 24.0 A |
| Case/Package | TO-252-3 |
| Drain to Source Resistance (on) (Rds) | 40 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 68 W |
| Part Family | IRLR2705 |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Continuous Drain Current (Ids) | 28.0 A |
| Rise Time | 100 ns |
| Input Capacitance (Ciss) | 880pF @25V(Vds) |
| Input Power (Max) | 68 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Operating Temperature | -55℃ ~ 175℃ |
Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
●Logic-Level Gate Drive
●Ultra Low On-Resistance
●Surface Mount (IRLR2705)
●Straight Lead (IRLU2705)
●Advanced Process Technology
●Fast Switching
●Fully Avalanche Rated
●Lead-Free
International Rectifier
10 Pages / 0.24 MByte
International Rectifier
11 Pages / 0.25 MByte
International Rectifier
Trans MOSFET N-CH 55V 28A 3Pin (2+Tab) DPAK
International Rectifier
Trans MOSFET N-CH 55V 28A 3Pin(2+Tab) DPAK Trans MOSFET N-CH 55V 28A 3Pin(2+Tab) DPAK Trans MOSFET N-CH 55V 28A 3P...
International Rectifier
Trans MOSFET N-CH 55V 28A 3Pin(2+Tab) DPAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.04Ω; ID 28A; D-Pak (TO-252AA); PD 68W; -55de
International Rectifier
Trans MOSFET N-CH 55V 28A 3Pin(2+Tab) DPAK T/R
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