| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 55.0 V |
| Current Rating | 41.0 A |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 27 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Part Family | IRLR2905 |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55.0 V |
| Continuous Drain Current (Ids) | 42.0 A |
| Rise Time | 84.0 ns |
| Input Capacitance (Ciss) | 1700pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Operating Temperature (Max) | 175 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
VDSS= 55V
●RDS(on)= 0.027Ω
●ID= 42A
●Description
●Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
●Logic-Level Gate Drive
●Ultra Low On-Resistance
●Surface Mount (IRLR2905)
●Straight Lead (IRLU2905)
●Advanced Process Technology
●Fast Switching
●Fully Avalanche Rated
●Lead-Free
International Rectifier
11 Pages / 0.13 MByte
International Rectifier
12 Pages / 0.3 MByte
International Rectifier
3 Pages / 0.07 MByte
International Rectifier
Trans MOSFET N-CH 55V 42A 3Pin(2+Tab) DPAK
International Rectifier
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ω; ID 42A; D-Pak (TO-252AA); PD 110W
International Rectifier
Trans MOSFET N-CH 55V 60A 3Pin(2+Tab) DPAK T/R
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